Silicon carbide is a IV-IV compound semiconductor with great technological importance. It promises to be an excellent candidate for high frequency, and in particular, high power devices. Because of the fact that SiC can be operated at higher temperatures (up to 600 °C) compared to silicon, it is suitable for high temperature devices. A high quality, flat and single domain surface b-SiC(100) surface was prepared by CVD on a Si(100) wafer [1]. Sample preparation is particularly difficult because of the large lattice mismatch between the epitaxial SiC film and the Si substrate. The images were obtained using a Variable Temperature UHV STM. (30 nm x 30 nm).
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