Semiconductor Heterostructure GaAs / AlGaAs
Photonenergy: 150 eV,
Ekin: 66 eV (Al 2p),
∆EFWHM = 600 meV,
Epass = 100 eV,
Beamline UE 52 SGM, BESSY II

The sample was developed as a structure for test and calibration purposes by the "Bundesanstalt für Materialforschung und -prüfung”.

 
This result has been obtained with :
NanoESCA

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AUGER AND ESCA SOLUTIONS
Coloured SEM images Coloured SEM images
Easter Bunny Easter Bunny
PET 1 PET 1
PVF PVF
Si Si
Chess board pattern of Au on Si Chess board pattern of Au on Si
Semiconductor Heterostructure GaAs / AlGaAs Semiconductor Heterostructure GaAs / AlGaAs
Trace Elements in Sub-μm Meteorite Grains Trace Elements in Sub-μm Meteorite Grains
SEM Performance sub 3 nm SEM Performance sub 3 nm
NanoESCA with sub-µm spatial XPS resolution in the lab NanoESCA with sub-µm spatial XPS resolution in the lab
Scanning Electron Microscopy with Polarisation Analysis Scanning Electron Microscopy with Polarisation Analysis
Imaging XPS with 650 nm Resolution Imaging XPS with 650 nm Resolution
Compositional image Compositional image
SEM of a 'Whale' SEM of a 'Whale'
Test pattern Test pattern
Writing patterns with FIB Writing patterns with FIB
Sputter depth profiling experiment on a magnetic tunnel junction Sputter depth profiling experiment on a magnetic tunnel junction
Silver islands on Silicon Silver islands on Silicon
Gold islands on carbon Gold islands on carbon
Colour overlay of angular maps from Cu 3d and sp hyprid peaks Colour overlay of angular maps from Cu 3d and sp hyprid peaks
Spatially-resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns Spatially-resolved, energy-filtered imaging of core level and valence band photoemission of highly p and n doped silicon patterns
Writing image Patterns with FIB Writing image Patterns with FIB