The Carbon Doping Source SUKO is a highly optimized source for carbon p-type doping in III-V MBE. The SUKO provides a very clean and constant flux at a low deposition rate up to 2 Å/min. A maximum total layer thickness of 5 µm C with one filament is reported, by what layers of up to 1 mm highly carbon-doped GaAs are achievable.

The sublimation of carbon requires very high temperatures up to 2300° C. Therefore we designed the hot zone around the filament completely shielded with pyrolytic graphite (PG).

• Growth of Si-C and Si-Ge-C alloys
• P-type doping in III-V MBE
• Fast and precise flux control 
• Ultra high purity pyrolytic graphite (PG) filament